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STB25NM60ND - STMicroelectronics

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STB25NM60ND Details

  • Manufacturer Part Number:

    STB25NM60ND

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Package Description:

    ROHS COMPLIANT, TO-263, D2PAK-3

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    850 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    84 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB25NM60ND Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STB25NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced voltage ratings.
  • To ensure reliability in high-temperature applications, it is essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and derating the device according to the temperature rating.
  • The recommended gate drive voltage for the STB25NM60ND is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
  • Yes, the STB25NM60ND is suitable for switching applications with high dv/dt, but it's essential to ensure that the device is properly snubbed and that the gate drive is optimized to minimize oscillations and ringing.
  • To protect the STB25NM60ND from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) in combination with a fuse or a current limiter.

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STB25NM60ND Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like STB25, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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