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STB30NM60ND - STMicroelectronics

Description: MOSFET N-channel 600V, 25A FDMesh II

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STB30NM60ND - STMicroelectronics PCB footprint - Other - Other - ST_D2PAK
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STB30NM60ND Details

  • Manufacturer Part Number:

    STB30NM60ND

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Package Description:

    ROHS COMPLIANT, TO-263, D2PAK-3

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    900 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.385 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB30NM60ND Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the STB30NM60ND is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The PCB layout should also be designed to minimize thermal resistance.
  • The recommended gate drive voltage for the STB30NM60ND is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.
  • Yes, the STB30NM60ND can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent shoot-through currents.
  • The maximum allowed dv/dt for the STB30NM60ND is 10kV/μs, but it's recommended to limit it to 5kV/μs or less to prevent voltage overshoots and ensure reliable operation.

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STB30NM60ND Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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