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STB40N60M2 - STMicroelectronics

Description: N‑channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a D²PAK, TO-220 and TO-247 packages

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STB40N60M2 Details

  • Manufacturer Part Number:

    STB40N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, D2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    136 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB40N60M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STB40N60M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and voltage (Vds) ratings. For the STB40N60M2, the maximum Tj is 175°C and the maximum Vds is 600V. Engineers should consult the application note AN1156 from STMicroelectronics for more information on SOA calculations.
  • To minimize switching losses, the STB40N60M2 should be driven with a gate voltage (Vgs) that is high enough to ensure the device is fully enhanced. The recommended Vgs is typically between 10V to 15V. Additionally, the gate drive circuit should be designed to provide a fast rise and fall time (tr and tf) to minimize switching losses. A gate resistor (Rg) value of around 10-20 ohms is recommended to slow down the gate voltage rise time and reduce electromagnetic interference (EMI).
  • For optimal thermal performance, the STB40N60M2 should be mounted on a PCB with a thermal pad that is connected to a heat sink or a thermal interface material (TIM). The PCB layout should be designed to minimize thermal resistance and ensure good heat dissipation. A recommended layout is to use a symmetrical layout with the device centered on the PCB, and to use thermal vias to connect the thermal pad to the heat sink or TIM. Engineers should consult the application note AN1156 from STMicroelectronics for more information on PCB layout and thermal management guidelines.
  • To protect the STB40N60M2 from overvoltage and overcurrent conditions, engineers can implement various protection circuits, such as overvoltage protection (OVP) and overcurrent protection (OCP) circuits. OVP circuits can be implemented using zener diodes or voltage regulators, while OCP circuits can be implemented using current sense resistors and comparators. Additionally, engineers can use protection devices such as transient voltage suppressors (TVS) and metal-oxide varistors (MOV) to protect the device from voltage transients and surges.
  • The recommended gate drive circuit for the STB40N60M2 is a totem pole configuration using a dedicated gate driver IC, such as the STMicroelectronics L638x or L639x series. This configuration provides a high current drive capability and fast switching times, which are essential for minimizing switching losses and ensuring reliable operation. Engineers should consult the application note AN1156 from STMicroelectronics for more information on gate drive circuit design guidelines.

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STB40N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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