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STB45NF06T4 - STMicroelectronics

Description: STB45NF06T4 N-Channel MOSFET, 38 A, 60 V STripFET, 3-Pin D2PAK STMicroelectronics

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STB45NF06T4 Details

  • Manufacturer Part Number:

    STB45NF06T4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    D2PAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    135 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    38 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    63 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    80 W

  • Pulsed Drain Current-Max (IDM):

    152 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB45NF06T4 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STB45NF06T4 can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure the STB45NF06T4 is properly biased, make sure to provide a stable voltage supply, use a suitable gate resistor, and ensure the gate-source voltage is within the recommended range (typically -2V to 7V).
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the load. Use a ground plane and decoupling capacitors to reduce noise and ringing.
  • To protect the STB45NF06T4 from overvoltage and overcurrent conditions, use a voltage regulator or a zener diode to clamp the voltage, and add a current sense resistor and a fuse or a current limiter to prevent overcurrent.
  • A recommended gate drive circuit for the STB45NF06T4 includes a gate driver IC, a bootstrap capacitor, and a gate resistor. The gate driver IC should be able to provide a high current pulse to quickly charge and discharge the gate capacitance.

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STB45NF06T4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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