STB46N60M6 footprint, schematic symbol and 3D model by STMicroelectronics

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STB46N60M6 - STMicroelectronics PCB footprint - Other - Other - STB46N60M6-1

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Datasheet Download Datasheet
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Part Number STB46N60M6
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - STB46N60M6-1
Released Date Oct 4, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STB46N60M6 Details

Manufacturer Part Number:
STB46N60M6
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
TO-263, D2PAK-3/2
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Date Of Intro:
2019-08-02
Manufacturer:
STMicroelectronics
YTEOL:
5
Avalanche Energy Rating (Eas):
760 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
600 V
Drain Current-Max (ID):
36 A
Drain-source On Resistance-Max:
0.08 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
3.7 pF
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
250 W
Pulsed Drain Current-Max (IDM):
126 A
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STB46N60M6 Frequently Asked Questions (FAQs)

The maximum safe operating area (SOA) for the STB46N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
To ensure proper cooling, consider the device's thermal resistance (RthJA), maximum junction temperature (Tj), and power dissipation (Pd). Use a heat sink or thermal interface material to reduce thermal resistance, and ensure good airflow around the device. You can also use thermal simulation tools to optimize your design.
The recommended gate drive voltage for the STB46N60M6 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.
To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using ground planes, and minimizing loop areas. Additionally, consider using EMI filters, shielding, and snubbers to reduce electromagnetic radiation.
The maximum allowed dv/dt for the STB46N60M6 is not explicitly stated in the datasheet, but it is typically in the range of 10V/ns to 50V/ns. Exceeding this limit can cause voltage overshoots, ringing, and even device failure.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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