STB50N65DM6 footprint, schematic symbol and 3D model by STMicroelectronics

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STB50N65DM6 - STMicroelectronics PCB footprint - Other - Other - STB50N65DM6-2

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Part Number STB50N65DM6
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - STB50N65DM6-2
Released Date Oct 4, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STB50N65DM6 Details

Manufacturer Part Number:
STB50N65DM6
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
TO-263, D2PAK-3/2
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Date Of Intro:
2020-01-07
Manufacturer:
STMicroelectronics
YTEOL:
7
Avalanche Energy Rating (Eas):
560 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
650 V
Drain Current-Max (ID):
33 A
Drain-source On Resistance-Max:
0.091 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
3 pF
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
245
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
250 W
Pulsed Drain Current-Max (IDM):
120 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STB50N65DM6 Frequently Asked Questions (FAQs)

The maximum safe operating area (SOA) for the STB50N65DM6 is not explicitly stated in the datasheet, but it can be calculated using the device's thermal resistance, maximum junction temperature, and voltage ratings. A safe operating area analysis should be performed to ensure the device operates within its thermal and electrical limits.
To ensure proper cooling, consider the device's thermal resistance, maximum junction temperature, and power dissipation. Use a heat sink or thermal interface material, and ensure good airflow around the device. The datasheet provides thermal resistance values and power dissipation calculations to help with thermal design.
The recommended gate drive voltage for the STB50N65DM6 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.
Yes, the STB50N65DM6 can be used in a parallel configuration to increase current handling, but it requires careful consideration of the device's thermal and electrical characteristics. Ensure that the devices are properly matched, and that the gate drive and layout are designed to minimize differences in switching times and currents.
To protect the STB50N65DM6 from overvoltage and overcurrent conditions, use a combination of voltage and current sensing, along with protection circuits such as overvoltage protection (OVP) and overcurrent protection (OCP) circuits. The datasheet provides guidance on the device's voltage and current ratings, as well as recommended protection circuits.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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