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STB6NK60Z-1 - STMicroelectronics

Description: N-channel 600 V, 1 Ω typ., 6 A SuperMESH Power MOSFETs in I²PAK, D²PAK, TO-220 and TO-220FP packages

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PCB Footprints
STB6NK60Z-1 - STMicroelectronics PCB footprint - Other - Other - I²PAK(H=14.68mm)
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STB6NK60Z-1 - STMicroelectronics  - 3D model - Other - I²PAK(H=14.68mm)
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STB6NK60Z-1 Details

  • Manufacturer Part Number:

    STB6NK60Z-1

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-262AA

  • Package Description:

    ROHS COMPLIANT, TO-262, I2PAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Date Of Intro:

    1980-01-04

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.8

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB6NK60Z-1 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of the STB6NK60Z-1 is 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 600V.
  • The recommended gate resistor value for the STB6NK60Z-1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the STB6NK60Z-1 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the STB6NK60Z-1 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding overcurrent protection using a fuse or a current sense resistor.

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STB6NK60Z-1 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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