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STB75NF20 - STMicroelectronics

Description: N-channel 200V - 0.028Ω - 75A - D²PAK - TO-220 - TO-247 - low gate charge STripFET™ Power MOSFET

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STB75NF20 - STMicroelectronics PCB footprint - Other - Other - STB75NF20-1
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STB75NF20 Details

  • Manufacturer Part Number:

    STB75NF20

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    D2PAK, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    205 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB75NF20 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STB75NF20 is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is Vgs = 10V, Vds = 50V, and Id = 1A.
  • The maximum drain-source voltage (Vds) rating for the STB75NF20 is 75V.
  • To protect the STB75NF20 from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.
  • The recommended PCB layout for the STB75NF20 includes a solid ground plane, short and wide traces for the drain and source pins, and a decoupling capacitor between the drain and source pins.

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STB75NF20 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image STB75N20T4 STMicroelectronics

Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET