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STB7NK80Z-1 - STMicroelectronics

Description: N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D²PAK,I²PAK Zener-protected SuperMESH™ Power MOSFET

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STB7NK80Z-1 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - STB7NK80Z-1
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STB7NK80Z-1 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - STB7NK80Z-1
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STB7NK80Z-1 Details

  • Manufacturer Part Number:

    STB7NK80Z-1

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-262AA

  • Package Description:

    ROHS COMPLIANT, TO-262, I2PAK-3

  • Pin Count:

    3

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.2

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    5.2 A

  • Drain-source On Resistance-Max:

    1.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    20.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB7NK80Z-1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STB7NK80Z-1 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and optimizing the PCB design for heat dissipation.
  • The recommended gate drive voltage for the STB7NK80Z-1 is between 10V and 15V, with a maximum voltage of 20V.
  • To protect the STB7NK80Z-1, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and consider adding a fuse or a current limiter to prevent damage from excessive current.
  • The maximum allowed voltage for the STB7NK80Z-1's drain-source voltage (Vds) is 800V.

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STB7NK80Z-1 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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