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STB80NF10T4 - STMicroelectronics

Description: N-channel 100 V, 0.012 Ω, 80 A, TO-220, D²PAK low gate charge STripFET™ II Power MOSFET -55 to 175 °C

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PCB Footprints
STB80NF10T4 - STMicroelectronics PCB footprint - Other - Other -  D²PAK (TO-263)_2026-10
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3D Models
STB80NF10T4 - STMicroelectronics  - 3D model - Other -  D²PAK (TO-263)_2026-10
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STB80NF10T4 Details

  • Manufacturer Part Number:

    STB80NF10T4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    TO-263, D2PAK-3

  • Pin Count:

    4

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    350 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    210 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB80NF10T4 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STB80NF10T4 is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing conditions are Vgs = 10V, Vds = 50V, and Id = 10A.
  • The maximum current rating for the STB80NF10T4 is 80A.
  • To protect the STB80NF10T4 from overvoltage and overcurrent, use a voltage regulator to limit the voltage, and add a current sense resistor and a fuse to detect and interrupt excessive current.
  • The thermal resistance of the STB80NF10T4 is Rth(j-a) = 1.5°C/W and Rth(j-c) = 0.5°C/W.

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STB80NF10T4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image STB80NF10 STMicroelectronics

Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB