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STB80NF55-06T - STMicroelectronics

Description: N-channel 55 V, 5 mOhm, 80 A STripFET(TM) II Power MOSFET in a D2PAK package

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STB80NF55-06T - STMicroelectronics - PCB symbol
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STB80NF55-06T - STMicroelectronics PCB footprint - Other - Other - D2PAK_2022-14
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STB80NF55-06T Details

  • Manufacturer Part Number:

    STB80NF55-06T

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-263, D2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    350 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB80NF55-06T Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STB80NF55-06T is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • The junction-to-case thermal resistance (RthJC) for the STB80NF55-06T is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet, such as RthJA (junction-to-ambient) and RthJC (case-to-ambient). A rough estimate can be obtained by subtracting RthCA from RthJA.
  • The recommended PCB layout and thermal management for the STB80NF55-06T are not explicitly stated in the datasheet. However, general guidelines for MOSFET PCB layout and thermal management include using a thermal pad, placing the device near a heat sink, and ensuring good thermal conductivity between the device and the heat sink. Consult STMicroelectronics' application notes and thermal management guidelines for more information.
  • The STB80NF55-06T is a general-purpose MOSFET, and its high-frequency performance is not explicitly characterized in the datasheet. While it may be possible to use it in high-frequency switching applications, it's recommended to consult STMicroelectronics' application notes and evaluate the device's performance in your specific application to ensure it meets your requirements.
  • The recommended gate drive voltage and current for the STB80NF55-06T are not explicitly stated in the datasheet. However, general guidelines for MOSFET gate drive include using a voltage between 5-10V and a current of 1-10mA, depending on the specific application and switching frequency. Consult STMicroelectronics' application notes and gate drive guidelines for more information.

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STB80NF55-06T Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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