Part Image

STD12N60DM6 - STMicroelectronics

Description: N-channel 600 V, 345 mΩ typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package

Download STD12N60DM6 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STD12N60DM6 - STMicroelectronics PCB footprint - Other - Other - STD12N60DM6-2
click to zoom

STD12N60DM6 Details

  • Manufacturer Part Number:

    STD12N60DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2020-10-12

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    195 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.39 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.7 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD12N60DM6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STD12N60DM6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STD12N60DM6, this region is typically bounded by the maximum drain-source voltage (Vds), maximum drain current (Id), and maximum junction temperature (Tj). Engineers can use simulation tools or consult with STMicroelectronics' application notes to determine the SOA for their specific application.
  • To ensure proper cooling of the STD12N60DM6, engineers should consider the device's thermal resistance (Rthja) and maximum junction temperature (Tj). The thermal resistance is typically specified in the datasheet, and it represents the ability of the device to dissipate heat. Engineers can use heat sinks, thermal interfaces, and other cooling solutions to reduce the thermal resistance and keep the junction temperature within the recommended range. Additionally, they should ensure good airflow around the device and avoid thermal hotspots in the PCB design.
  • The recommended gate drive voltage for the STD12N60DM6 is typically between 10V and 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce the turn-on and turn-off times, but it may also increase the power consumption and electromagnetic interference (EMI). Engineers should consult the datasheet and application notes to determine the optimal gate drive voltage for their design.
  • To protect the STD12N60DM6 from electrostatic discharge (ESD), engineers should follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. They should also ensure that the device is properly connected to a ground plane during PCB assembly and that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.
  • The maximum allowed dv/dt (voltage change over time) for the STD12N60DM6 is typically specified in the datasheet, but it can also depend on the specific application and operating conditions. A high dv/dt can cause the device to malfunction or fail, so engineers should ensure that the voltage transitions are slow enough to prevent this. A general rule of thumb is to limit the dv/dt to 10V/ns or less, but this value may need to be adjusted based on the specific design requirements.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STD12N60DM6 Overview

Use the download button to access the STD12N60DM6 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like STD12, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STD12N60DM6

Showing 0 results