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STD12NF06L - STMicroelectronics

Description: STD12NF06L, N-channel MOSFET Transistor 12 A 60 V, 3-Pin D-PAK

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STD12NF06L Details

  • Manufacturer Part Number:

    STD12NF06L

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252

  • Package Description:

    DPAK-3/2

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42.8 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD12NF06L Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STD12NF06L is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
  • To calculate the power dissipation of the STD12NF06L, you need to know the drain-source on-state resistance (Rds(on)), the drain current (ID), and the voltage across the device (Vds). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) * ID^2 + Vds * ID. You can find the Rds(on) value in the datasheet.
  • To minimize thermal resistance, it's recommended to use a PCB layout with a large copper area connected to the drain pin (D) and a thermal via connecting the drain pin to a heat sink or a copper plane on the other side of the PCB. This helps to dissipate heat efficiently and reduce the thermal resistance.
  • Yes, the STD12NF06L is suitable for high-frequency switching applications up to 100 kHz. However, you need to ensure that the device is properly driven and that the PCB layout is optimized for high-frequency operation. You should also consider the device's switching losses and ensure that the power dissipation is within the recommended limits.
  • To protect the STD12NF06L from ESD, you should handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind. You can also add ESD protection devices, such as TVS diodes, to the PCB to protect the STD12NF06L from ESD events.

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STD12NF06L Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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