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STD13N60DM2 - STMicroelectronics

Description: MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package

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STD13N60DM2 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)_FFW_1
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STD13N60DM2 - STMicroelectronics - 3D model - Other - DPAK (TO-252)_FFW_1
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STD13N60DM2 Details

  • Manufacturer Part Number:

    STD13N60DM2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    DPAK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE ENERGY RATED

  • Avalanche Energy Rating (Eas):

    340 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.365 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.9 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PDSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    53.1 ns

  • Turn-on Time-Max (ton):

    17.1 ns

STD13N60DM2 Frequently Asked Questions (FAQs)

  • The STD13N60DM2 is a power MOSFET, and as such, it does not have a specific maximum operating frequency. However, the device is suitable for high-frequency switching applications up to several hundred kHz.
  • To ensure proper thermal management, it is essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink or PCB.
  • The recommended gate drive voltage for the STD13N60DM2 is between 10V and 15V. However, the device can tolerate gate voltages up to 20V, but this may reduce the device's reliability.
  • While the STD13N60DM2 is primarily designed for switching applications, it can be used in linear mode. However, the device's performance and reliability may be compromised, and the user should carefully evaluate the device's characteristics and ensure it meets the application's requirements.
  • To protect the STD13N60DM2 from ESD, it is essential to handle the device by the body, avoid touching the pins, and use an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static bag or tube, and the PCB should be designed with ESD protection in mind.

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STD13N60DM2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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