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STD13N60M2 - STMicroelectronics

Description: STMICROELECTRONICS - STD13N60M2 - MOSFET Transistor, N Channel, 11 A, 600 V, 0.35 ohm, 10 V, 3 V

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STD13N60M2 - STMicroelectronics PCB footprint - Other - Other - STD13N60M2-5
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STD13N60M2 Details

  • Manufacturer Part Number:

    STD13N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.1 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD13N60M2 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of the STD13N60M2 is 150°C.
  • Yes, the STD13N60M2 is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and internal gate resistance.
  • To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The recommended thermal resistance (Rth) is ≤ 1.5 K/W.
  • The recommended gate drive voltage for the STD13N60M2 is between 10 V and 15 V to ensure proper switching and minimize power losses.
  • Yes, the STD13N60M2 can be used in a parallel configuration to increase current handling, but ensure that the devices are properly matched and the gate drive signals are synchronized to prevent uneven current sharing.

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STD13N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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