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STD13NM60ND - STMicroelectronics

Description: N-channel 600 V, 325 mΩ typ., 11 A FDmesh II Power MOSFET in a DPAK package

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STD13NM60ND - STMicroelectronics - PCB symbol
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STD13NM60ND - STMicroelectronics PCB footprint - Other - Other - DPAK ( TO-252)
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STD13NM60ND - STMicroelectronics - 3D model - Other - DPAK ( TO-252)
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STD13NM60ND Details

  • Manufacturer Part Number:

    STD13NM60ND

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    162 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD13NM60ND Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STD13NM60ND is 100 kHz, but it can be operated at higher frequencies with proper thermal management and derating.
  • Proper thermal management can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device. Additionally, the PCB should be designed to minimize thermal resistance and ensure good heat dissipation.
  • The recommended gate resistor value for the STD13NM60ND is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.
  • Yes, the STD13NM60ND is a high-reliability device that is suitable for use in high-reliability applications such as aerospace, automotive, and industrial control systems. However, it is essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the STD13NM60ND from ESD, it is essential to follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, the device should be soldered onto a PCB with ESD protection devices, such as TVS diodes or ESD protection arrays.

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STD13NM60ND Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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