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STD15N60DM6 - STMicroelectronics

Description: N-channel 600 V, 286 mΩ typ., 12 A MDmesh DM6 Power MOSFET in a DPAK package

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STD15N60DM6 - STMicroelectronics PCB footprint - Other - Other - STD15N60DM6-3
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STD15N60DM6 Details

  • Manufacturer Part Number:

    STD15N60DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2020-09-09

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    240 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.338 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD15N60DM6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STD15N60DM6 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 125°C to ensure reliable operation.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, use a gate driver with a high current capability to quickly charge and discharge the gate capacitance.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections close together, and use a ground plane to reduce inductance. Avoid using vias or narrow traces near the device.
  • Yes, the STD15N60DM6 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly driven and the PCB layout is optimized to minimize parasitic inductance and capacitance. Also, consider the device's switching losses and thermal management.
  • Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current. Also, consider using a fuse or a circuit breaker to disconnect the power supply in case of a fault.

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STD15N60DM6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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