STD16N60M6 footprint, schematic symbol and 3D model by STMicroelectronics

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STD16N60M6 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)-2022_4

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Datasheet Download Datasheet
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Part Number STD16N60M6
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - DPAK (TO-252)-2022_4
Released Date Aug 28, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
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STD16N60M6 Details

Manufacturer Part Number:
STD16N60M6
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
DPAK-3/2
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
6.28
Avalanche Energy Rating (Eas):
110 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
600 V
Drain Current-Max (ID):
12 A
Drain-source On Resistance-Max:
0.32 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
3 pF
JEDEC-95 Code:
TO-252
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
110 W
Pulsed Drain Current-Max (IDM):
32 A
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STD16N60M6 Frequently Asked Questions (FAQs)

The maximum safe operating area (SOA) for the STD16N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal pad with a low thermal resistance to dissipate heat. Also, ensure good airflow around the device and avoid blocking the heat sink fins. You can also use thermal simulation tools to estimate the device's temperature and optimize your design.
The recommended gate drive voltage for the STD16N60M6 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations. Consult the datasheet and application notes for more information.
Yes, the STD16N60M6 is suitable for high-frequency switching applications up to several hundred kHz. However, you should consider the device's switching losses, gate charge, and parasitic capacitances when designing your circuit. Also, ensure that the device is properly cooled and that the PCB layout is optimized for high-frequency operation.
To protect the STD16N60M6 from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an ESD-safe package. In your design, consider adding ESD protection components, such as TVS diodes or ESD protection arrays, to prevent ESD events from damaging the device.

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STD16N60M6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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