Part Image

STD2LN60K3 - STMicroelectronics

Description: N-channel 600 V, 4 Ω typ., 2 A SuperMESH3™ Power MOSFET in DPAK, TO-220FP and IPAK packages

Download STD2LN60K3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STD2LN60K3 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)_ 2022
click to zoom

STD2LN60K3 Details

  • Manufacturer Part Number:

    STD2LN60K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.3

  • Additional Feature:

    BULK: 2500

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    4.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.5 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD2LN60K3 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STD2LN60K3 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a capacitor (e.g., 100 nF) between the gate and source to filter out noise.
  • The recommended gate drive voltage for the STD2LN60K3 is between 10 V and 15 V, with a maximum of 20 V.
  • Use a voltage regulator to limit the voltage supply, and add a current sense resistor and a fuse to protect against overcurrent. Also, consider using a TVS diode for overvoltage protection.
  • The thermal resistance of the STD2LN60K3 is typically around 2.5°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case).

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STD2LN60K3 Overview

Use the download button to access the STD2LN60K3 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like STD2L, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STD2LN60K3

Showing 0 results