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STD2N62K3 - STMicroelectronics

Description: N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages

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STD2N62K3 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)-2022_8
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STD2N62K3 Details

  • Manufacturer Part Number:

    STD2N62K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    85 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    620 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    3.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    8.8 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD2N62K3 Frequently Asked Questions (FAQs)

  • The STD2N62K3 is a power MOSFET, not a digital device, so it does not have a maximum operating frequency. However, it can switch at high frequencies (up to several hundred kHz) depending on the application and gate driver circuitry.
  • To ensure the STD2N62K3 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate driver circuit with a high current capability and a low output impedance is recommended.
  • The maximum safe operating area (SOA) of the STD2N62K3 is defined by the maximum drain-source voltage (Vds) and drain current (Id) ratings. The device can operate safely within the boundaries defined by the SOA curves provided in the datasheet.
  • To protect the STD2N62K3 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent excessive current.
  • The thermal resistance of the STD2N62K3 is typically around 1.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient) for the TO-220 package. This information is available in the datasheet.

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STD2N62K3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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