STD3N65M6 footprint, schematic symbol and 3D model by STMicroelectronics

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PCB Footprints

STD3N65M6 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252) type A_2022-2

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Datasheet Download Datasheet
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Part Number STD3N65M6
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - DPAK (TO-252) type A_2022-2
Released Date Aug 28, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
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STD3N65M6 Details

Manufacturer Part Number:
STD3N65M6
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
DPAK-3/2
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
6.28
Avalanche Energy Rating (Eas):
78 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
650 V
Drain Current-Max (ID):
3.5 A
Drain-source On Resistance-Max:
1.5 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
0.7 pF
JEDEC-95 Code:
TO-252
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
45 W
Pulsed Drain Current-Max (IDM):
14 A
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STD3N65M6 Frequently Asked Questions (FAQs)

The maximum junction temperature (Tj) of the STD3N65M6 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly.
For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Use a thermal pad or thermal interface material to fill any air gaps. Keep the PCB layout compact and symmetrical to minimize thermal gradients.
Yes, the STD3N65M6 is suitable for high-frequency switching applications up to 100 kHz. However, be aware of the device's switching losses, which increase with frequency. Ensure proper gate drive and layout to minimize ringing and overshoots.
Handle the device with ESD-protected equipment and follow proper ESD handling procedures. Use ESD protection devices, such as TVS diodes or ESD arrays, on the PCB to protect the device from external ESD events.

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STD3N65M6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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