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STD3N80K5 - STMicroelectronics

Description: N-channel 800 V, 2.8 Ohm typ., 2.5 MDmesh K5 Power MOSFET in a DPAK package , 3.5Ohm @ 1A, 10V , -55°C ~ 150°C (TJ)

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STD3N80K5 - STMicroelectronics PCB footprint - Other - Other - DPAK(TO-252
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STD3N80K5 - STMicroelectronics  - 3D model - Other - DPAK(TO-252
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STD3N80K5 Details

  • Manufacturer Part Number:

    STD3N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    65 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    3.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD3N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STD3N80K5 is typically defined by the voltage and current ratings. The device can operate safely up to 80V and 3A, but it's recommended to derate the voltage and current to ensure reliable operation.
  • To ensure proper thermal management, it's essential to provide a heat sink with a thermal resistance of less than 10°C/W. The device should be mounted on a PCB with a copper area of at least 1 cm² to dissipate heat effectively.
  • The recommended gate resistor value for the STD3N80K5 is typically between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.
  • Yes, the STD3N80K5 can be used in high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances to ensure reliable operation.
  • To protect the STD3N80K5 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage to 80V or less. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

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STD3N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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