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STD4N80K5 - STMicroelectronics

Description: N-channel 800 V, 2.1 Ω typ., 3 A MDmesh K5 Power MOSFET in a DPAK package

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PCB Footprints
STD4N80K5 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)-2026-10
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STD4N80K5 - STMicroelectronics  - 3D model - Other - DPAK (TO-252)-2026-10
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STD4N80K5 Details

  • Manufacturer Part Number:

    STD4N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    74.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    2.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD4N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STD4N80K5 is typically defined by the manufacturer as the region where the device can operate safely without damage. According to STMicroelectronics, the STD4N80K5 has a maximum SOA of Vds = 80V, Id = 4A, and Pd = 100W.
  • To ensure proper thermal management, it's essential to provide a heat sink with a thermal resistance (Rth) of less than 10°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the device and heat sink.
  • The recommended gate resistor value for the STD4N80K5 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10Ω and 100Ω is suitable for most applications. However, it's recommended to consult the application note or contact STMicroelectronics for specific guidance.
  • Yes, the STD4N80K5 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and thermal management when designing the application. Consult the datasheet and application notes for more information.
  • To protect the STD4N80K5 from electrostatic discharge (ESD), handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are ESD-safe, and use ESD-protective packaging and materials during storage and transportation.

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STD4N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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