STD5N60DM2 footprint, schematic symbol and 3D model by STMicroelectronics

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STD5N60DM2 - STMicroelectronics PCB footprint - Other - Other - STD5N60DM2-1

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Part Number STD5N60DM2
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - STD5N60DM2-1
Released Date Aug 29, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STD5N60DM2 Details

Manufacturer Part Number:
STD5N60DM2
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
DPAK-3/2
Manufacturer Package Code:
DPAK
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
16 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
5
Additional Feature:
BULK: 2500
Avalanche Energy Rating (Eas):
132 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
600 V
Drain Current-Max (ID):
3.5 A
Drain-source On Resistance-Max:
1.55 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
3.5 pF
JEDEC-95 Code:
TO-252
JESD-30 Code:
R-PSSO-G2
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
45 W
Pulsed Drain Current-Max (IDM):
14 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STD5N60DM2 Frequently Asked Questions (FAQs)

The maximum safe operating area (SOA) of the STD5N60DM2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal interface material to reduce thermal resistance, and ensure good airflow around the device. You can also use thermal simulation tools to estimate the device's temperature under various operating conditions.
The recommended gate drive voltage for the STD5N60DM2 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI). Consult the datasheet and application notes for more information.
Yes, the STD5N60DM2 is suitable for high-frequency switching applications up to several hundred kHz. However, you should consider the device's switching losses, gate charge, and parasitic capacitances when designing your circuit. You may need to use specialized gate drive circuits and layout techniques to minimize switching losses and ensure reliable operation.
To protect the STD5N60DM2 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. You can also add ESD protection devices, such as TVS diodes or ESD protection arrays, to your circuit to absorb or divert ESD pulses.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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