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STD5N60M2 - STMicroelectronics

Description: N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220 and IPAK packages

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STD5N60M2 - STMicroelectronics - PCB symbol
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STD5N60M2 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)_FFW_1
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STD5N60M2 - STMicroelectronics - 3D model - Other - DPAK (TO-252)_FFW_1
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STD5N60M2 Details

  • Manufacturer Part Number:

    STD5N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Additional Feature:

    AVALANCHE ENERGY RATED

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.75 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    85 ns

  • Turn-on Time-Max (ton):

    15 ns

STD5N60M2 Frequently Asked Questions (FAQs)

  • The STD5N60M2 is a power MOSFET, and as such, it does not have a specific maximum operating frequency. However, it is suitable for high-frequency switching applications up to several hundred kHz.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and that the gate resistance is minimized. A gate driver IC can be used to provide a high-current, low-impedance drive signal.
  • The SOA of the STD5N60M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, the device should not be operated at a voltage greater than 80% of the maximum rated voltage (600V) and a current greater than 80% of the maximum rated current (5A) simultaneously.
  • To protect the STD5N60M2 from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes, and a current sense resistor or a current limiter to detect and respond to overcurrent conditions.
  • The thermal resistance of the STD5N60M2 is typically around 2.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient). This means that the device's junction temperature will increase by 2.5°C for every watt of power dissipation. Proper thermal management, such as using a heat sink, is essential to ensure the device operates within its safe operating area.

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STD5N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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