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STD5N65M6 - STMicroelectronics

Description: N-channel 650 V, 1.15 Ohm typ., 4 A MDmesh M6 Power MOSFET in a DPAK package

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STD5N65M6 - STMicroelectronics PCB footprint - Other - Other - STD5N65M6-1
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STD5N65M6 Details

  • Manufacturer Part Number:

    STD5N65M6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active Unconfirmed

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • Additional Feature:

    BULK:2500

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    1.3 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    1 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD5N65M6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STD5N65M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive power dissipation or thermal stress.
  • To ensure the STD5N65M6 is properly biased for optimal performance, follow the recommended biasing conditions outlined in the datasheet, including the gate-source voltage (VGS) and drain-source voltage (VDS) ratings. Additionally, consider the device's threshold voltage (VTH) and ensure that the gate drive voltage is sufficient to fully enhance the device.
  • The recommended PCB layout and thermal management strategy for the STD5N65M6 involves using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good thermal conductivity between the device and the heat sink. Additionally, consider using thermal vias and a thermal interface material (TIM) to improve heat transfer.
  • To protect the STD5N65M6 from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider implementing ESD protection circuits, such as TVS diodes or ESD protection arrays, in the device's signal paths.
  • The reliability and lifetime expectations for the STD5N65M6 are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. As a general guideline, the device is designed to meet the reliability standards outlined in the datasheet, and its lifetime can be estimated based on the device's failure rate and operating conditions.

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STD5N65M6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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