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STD6N52K3 - STMicroelectronics

Description: N-channel 525 V, 1 Ω typ., 6.5 A MDmesh™ K3 Power MOSFET in DPAK package

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STD6N52K3 - STMicroelectronics PCB footprint - Other - Other - STD6N52K3-1
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STD6N52K3 Details

  • Manufacturer Part Number:

    STD6N52K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.3

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    525 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    70 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD6N52K3 Frequently Asked Questions (FAQs)

  • The STD6N52K3 is a power MOSFET, not a switching device, so it does not have a maximum operating frequency. However, it can be used in switching applications up to several hundred kHz.
  • To ensure the STD6N52K3 is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The maximum SOA for the STD6N52K3 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. Consult the application note AN1156 from STMicroelectronics for guidance on SOA calculation.
  • While the STD6N52K3 is a power MOSFET, it is not suitable for linear amplifier applications due to its high output capacitance and limited gain. It is better suited for switching applications such as DC-DC converters, motor control, and power supplies.
  • Use a voltage clamp or a zener diode to protect the STD6N52K3 from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC. Ensure the protection circuitry is designed to respond quickly to fault conditions.

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STD6N52K3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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