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STD7N52K3 - STMicroelectronics

Description: STD7N52K3 N-Channel MOSFET Transistor, 6 A, 525 V MDmesh K3, SuperMESH3, 3-Pin DPAK STMicroelectronics

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STD7N52K3 - STMicroelectronics PCB footprint - Other - Other - STD7N52K3-1
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STD7N52K3 Details

  • Manufacturer Part Number:

    STD7N52K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-252AA

  • Package Description:

    TO-252, DPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.25

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    525 V

  • Drain Current-Max (ID):

    6.3 A

  • Drain-source On Resistance-Max:

    0.98 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD7N52K3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the STD7N52K3 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To calculate the power dissipation, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The formula is: Pd = (Vds * Ids) + (Vgs * Igs), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
  • The recommended gate drive voltage for the STD7N52K3 is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to avoid damage to the device.
  • Yes, the STD7N52K3 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's requirements are within the device's specifications.
  • To protect the STD7N52K3 from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. Additionally, ensure that the device is operated within its specified voltage and current ratings.

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STD7N52K3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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