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STD7N60DM2 - STMicroelectronics

Description: N-channel 600 V, 0.78 Ω typ., 6 A MDmesh™ DM2 Power MOSFET in a DPAK package

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STD7N60DM2 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252) type A_2022-9
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STD7N60DM2 Details

  • Manufacturer Part Number:

    STD7N60DM2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    3

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STD7N60DM2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STD7N60DM2 is not explicitly stated in the datasheet. However, STMicroelectronics provides a SOA graph in the application note AN440 (Power MOSFETs: Efficient Use in Switching Mode Power Supplies) that can be used as a guideline. It's recommended to consult with STMicroelectronics' technical support for specific SOA requirements.
  • The junction-to-case thermal resistance (RthJC) for the STD7N60DM2 is not directly provided in the datasheet. However, the datasheet provides the thermal resistance from junction to ambient (RthJA) and the thermal resistance from case to ambient (RthCA). To calculate RthJC, you can use the following formula: RthJC = RthJA - RthCA. For the STD7N60DM2, RthJA is 62°C/W and RthCA is 45°C/W, so RthJC would be approximately 17°C/W.
  • The recommended gate drive voltage for the STD7N60DM2 is not explicitly stated in the datasheet. However, as a general rule of thumb, a gate drive voltage of 10-15V is recommended for N-channel MOSFETs like the STD7N60DM2. This ensures that the device is fully enhanced and minimizes switching losses.
  • The STD7N60DM2 is a high-voltage MOSFET with a relatively high gate charge (Qg) of 63nC. While it can be used in high-frequency switching applications, it may not be the most suitable choice due to its high Qg. The device's switching performance may be limited at high frequencies, and it may require a more complex gate drive circuit to achieve optimal performance. It's recommended to consult with STMicroelectronics' technical support or consider alternative devices with lower Qg for high-frequency switching applications.
  • To ensure the STD7N60DM2 is properly biased during startup, it's recommended to use a soft-start circuit or a voltage ramp-up circuit to slowly increase the gate-source voltage (Vgs) to the recommended operating voltage. This helps to prevent excessive inrush current and ensures the device is fully enhanced before entering normal operation.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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