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STD7N60M2 - STMicroelectronics

Description: N-channel 600 V, 0.86 Ω typ., 5 A, MDmesh™ M2 Power MOSFETs in DPAK -55°C ~ 150°C

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STD7N60M2 - STMicroelectronics - PCB symbol
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PCB Footprints
STD7N60M2 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252) type A_2026-1.1
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STD7N60M2 - STMicroelectronics - 3D model - Other - DPAK (TO-252) type A_2026-1.1
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STD7N60M2 Details

  • Manufacturer Part Number:

    STD7N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    99 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.95 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD7N60M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STD7N60M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, the SOA is typically limited by the device's thermal capabilities, and it's recommended to consult with STMicroelectronics' application notes or technical support for specific guidance.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is minimized (typically <10 ohms). Additionally, consider using a gate driver IC or a dedicated MOSFET driver to provide a high-current, low-impedance drive signal. Consult the datasheet and application notes for specific guidance on gate drive requirements.
  • For optimal thermal performance, ensure that the PCB layout provides a low-thermal-resistance path from the device to a heat sink or thermal pad. Use a thermal interface material (TIM) with a thermal conductivity > 1 W/m-K and a thickness < 0.1 mm. Consult the datasheet and application notes for specific guidance on PCB layout and thermal management.
  • Yes, the STD7N60M2 is suitable for high-frequency switching applications up to several hundred kHz. However, ensure that the device is properly driven and the PCB layout is optimized for high-frequency operation. Consult the datasheet and application notes for specific guidance on high-frequency operation and layout considerations.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device. Use a voltage clamp or a zener diode for OVP, and a current sense resistor or a dedicated OCP IC for OCP. Consult the datasheet and application notes for specific guidance on protection circuit design.

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STD7N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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