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STD7N80K5 - STMicroelectronics

Description: N-channel 800 V, 0.95 Ω typ 6 A MDmesh K5 Power MOSFET in a DPAK package -55 to 150 °C

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STD7N80K5 - STMicroelectronics - PCB symbol
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PCB Footprints
STD7N80K5 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252) type E_2026
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STD7N80K5 - STMicroelectronics - 3D model - Other - DPAK (TO-252) type E_2026
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STD7N80K5 Details

  • Manufacturer Part Number:

    STD7N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    88 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD7N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STD7N80K5 is typically defined by the voltage and current ratings. The device can operate safely up to 80V and 7A, but it's recommended to check the SOA curves in the datasheet to ensure the device is operated within the safe region.
  • To calculate the power dissipation of the STD7N80K5, you need to know the voltage drop across the device (Vds) and the current flowing through it (Ids). The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Ids. You can find the voltage drop and current ratings in the datasheet.
  • The thermal resistance of the STD7N80K5 is typically specified in the datasheet. For the STD7N80K5, the thermal resistance (Rth) is around 1.5°C/W (junction-to-ambient) and 0.5°C/W (junction-to-case). This information is important for thermal design and heat sink selection.
  • Yes, the STD7N80K5 is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to ensure reliable operation.
  • To protect the STD7N80K5 from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and current sensing resistors. Additionally, consider using a gate driver with built-in protection features, such as undervoltage lockout (UVLO) and overcurrent protection.

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STD7N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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