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STD80N10F7 - STMicroelectronics

Description: N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220

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STD80N10F7 - STMicroelectronics PCB footprint - Other - Other - STD80N10F7-6
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STD80N10F7 Details

  • Manufacturer Part Number:

    STD80N10F7

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.9

  • Additional Feature:

    ULTRA LOW-ON RESISTANCE

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD80N10F7 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STD80N10F7 is 100 MHz.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically between 2.5V to 5V.
  • The maximum power dissipation of the STD80N10F7 is 2.5W. It's essential to ensure proper heat sinking to prevent overheating.
  • Yes, the STD80N10F7 can be used in switching applications, but it's essential to ensure the device is properly driven and the switching frequency is within the recommended range to prevent overheating and ensure reliable operation.
  • To protect the STD80N10F7 from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure the workspace is ESD-safe. Also, use ESD protection devices, such as TVS diodes, in the circuit design.

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STD80N10F7 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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