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STD80N6F7 - STMicroelectronics

Description: N-channel 60 V, 6.8 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a DPAK package

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STD80N6F7 - STMicroelectronics - PCB symbol
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STD80N6F7 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)_FFW_1
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STD80N6F7 - STMicroelectronics - 3D model - Other - DPAK (TO-252)_FFW_1
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STD80N6F7 Details

  • Manufacturer Part Number:

    STD80N6F7

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Date Of Intro:

    2018-02-13

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD80N6F7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STD80N6F7 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this includes a VCC supply voltage between 4.5V and 5.5V, and a VGS (gate-source voltage) between 2V and 4V. Additionally, ensure the device is properly decoupled with capacitors and resistors as recommended in the application notes.
  • The maximum current rating for the STD80N6F7 is 80A, as specified in the datasheet. However, it's essential to consider the device's thermal characteristics and ensure proper heat sinking to prevent overheating and maintain reliability.
  • Yes, the STD80N6F7 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize electromagnetic interference (EMI) and ringing.
  • To protect the STD80N6F7 from ESD, follow proper handling and storage procedures. Use anti-static wrist straps, mats, and packaging materials. Ensure the device is properly grounded during assembly and testing, and consider adding ESD protection devices, such as TVS diodes, in the circuit design.

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STD80N6F7 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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