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STD9N40M2 - STMicroelectronics

Description: MOSFET PTD HIGH VOLTAGE N-channel 400 V, 0.59 Ω typ., 6 A MDmesh M2 Power MOSFET in a DPAK package

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STD9N40M2 - STMicroelectronics PCB footprint - Other - Other - STD9N40M2-6
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STD9N40M2 Details

  • Manufacturer Part Number:

    STD9N40M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.25

  • Avalanche Energy Rating (Eas):

    148 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.7 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD9N40M2 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STD9N40M2 is 100 kHz, but it can be operated at higher frequencies with reduced voltage ratings.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 40V. Additionally, a gate resistor (Rg) of 1 kΩ to 10 kΩ is recommended to limit the gate current.
  • The maximum power dissipation of the STD9N40M2 is 125 W, but this can be increased to 200 W with proper heat sinking and thermal management.
  • To protect the STD9N40M2 from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • For optimal performance and thermal management, use a multi-layer PCB with a solid ground plane, and place the STD9N40M2 near a heat sink or a thermal pad. Keep the drain and source pins as close as possible to minimize inductance and ensure good thermal conduction.

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STD9N40M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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