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STD9N60M2 - STMicroelectronics

Description: N-channel 600 V, 0.72 Ω typ., 5.5 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220 and IPAK packages

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STD9N60M2 - STMicroelectronics PCB footprint - Other - Other - STD9N60M2-3
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STD9N60M2 Details

  • Manufacturer Part Number:

    STD9N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    BULK: 2500

  • Avalanche Energy Rating (Eas):

    105 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.78 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.68 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD9N60M2 Frequently Asked Questions (FAQs)

  • The STD9N60M2 is a power MOSFET, not a switching device, so it doesn't have a specific maximum operating frequency. However, it's designed for high-frequency switching applications up to several hundred kHz.
  • To ensure proper thermal management, make sure to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material (TIM) and follow the recommended land pattern and thermal pad design guidelines from STMicroelectronics.
  • The recommended gate drive voltage for the STD9N60M2 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • While the STD9N60M2 is primarily designed for switching applications, it can be used in linear mode. However, the device's performance and reliability may be affected. Consult the datasheet and application notes for more information.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism to prevent damage to the device. The OVP circuit should be designed to clamp voltages above the maximum rated voltage, and the OCP mechanism should be set to limit the current below the maximum rated current.

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STD9N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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