STD9N65DM6AG footprint, schematic symbol and 3D model by STMicroelectronics

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STD9N65DM6AG - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252) type A_2022-5

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Datasheet Download Datasheet
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Part Number STD9N65DM6AG
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - DPAK (TO-252) type A_2022-5
Released Date Aug 29, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STD9N65DM6AG Details

Manufacturer Part Number:
STD9N65DM6AG
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
DPAK-3/2
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Date Of Intro:
2020-04-20
Manufacturer:
STMicroelectronics
YTEOL:
7
Avalanche Energy Rating (Eas):
400 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
650 V
Drain Current-Max (ID):
9 A
Drain-source On Resistance-Max:
0.44 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
0.4 pF
JEDEC-95 Code:
TO-252
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
89 W
Pulsed Drain Current-Max (IDM):
28 A
Reference Standard:
AEC-Q101
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STD9N65DM6AG Frequently Asked Questions (FAQs)

The maximum safe operating area (SOA) for the STD9N65DM6AG is not explicitly stated in the datasheet. However, STMicroelectronics provides an SOA curve in the application note AN440 (MOSFETs: Gate-Source Voltage (VGS) and Safe Operating Area (SOA)) which can be used as a guideline.
To ensure the STD9N65DM6AG is fully turned on, the gate-source voltage (VGS) should be at least 10V, and the gate current (IG) should be sufficient to charge the gate capacitance quickly. A gate driver with a high current capability (e.g., 1A or more) is recommended.
For optimal performance and thermal management, it is recommended to follow STMicroelectronics' guidelines for PCB layout, including: keeping the drain and source pins as close as possible, using a large copper area for heat dissipation, and minimizing the inductance of the drain and source connections.
The STD9N65DM6AG is suitable for high-frequency switching applications up to several hundred kHz. However, the user should carefully consider the MOSFET's switching characteristics, such as the rise and fall times, and ensure that the gate driver and PCB layout are optimized for high-frequency operation.
Proper thermal management is crucial for the STD9N65DM6AG. Ensure good heat dissipation by using a heat sink with a thermal resistance of less than 1°C/W, and follow STMicroelectronics' guidelines for thermal interface materials and mounting techniques.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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