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STF10N62K3 - STMicroelectronics

Description: STF10N62K3 N-Channel MOSFET Transistor, 8.4 A, 620 V MDmesh K3, SuperMESH3, 3-Pin TO-220FP STMicroelectronics, 100µA, -55°C ~ 150°C

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STF10N62K3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP_2025
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STF10N62K3 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP_2025
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STF10N62K3 Details

  • Manufacturer Part Number:

    STF10N62K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    ROHS COMPLIANT, TO-220FP, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.4

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    620 V

  • Drain Current-Max (ID):

    8.4 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    33.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF10N62K3 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STF10N62K3 is not explicitly stated in the datasheet, but it can be calculated using the device's thermal resistance, maximum junction temperature, and power dissipation. A safe operating area analysis should be performed to ensure the device operates within its thermal limits.
  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consider the device's gate-source voltage, drain-source voltage, and current ratings. A well-designed biasing circuit and proper PCB layout are crucial for optimal performance and reliability.
  • Thermal management is critical for the STF10N62K3. Ensure good heat dissipation by using a heat sink, thermal interface material, and a well-designed PCB with adequate copper areas. The device's thermal resistance, junction temperature, and power dissipation should be considered to prevent overheating and ensure reliable operation.
  • Yes, the STF10N62K3 is suitable for high-frequency switching applications due to its low gate charge, low RDS(on), and fast switching times. However, consider the device's maximum switching frequency, gate-source voltage, and drain-source voltage ratings to ensure reliable operation and minimize losses.
  • To protect the STF10N62K3 from ESD, follow proper handling and storage procedures, use ESD-safe equipment and materials, and implement ESD protection circuits in your design, such as TVS diodes or ESD protection arrays.

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STF10N62K3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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