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STF10NM60N - STMicroelectronics

Description: N-channel 600 V, 530 mΩ typ., 10 A MDmesh II Power MOSFET in a TO-220FP package

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STF10NM60N - STMicroelectronics - PCB symbol
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PCB Footprints
STF10NM60N - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP type B package mechanical data**
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STF10NM60N - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP type B package mechanical data**
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STF10NM60N Details

  • Manufacturer Part Number:

    STF10NM60N

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.9

  • Additional Feature:

    AVALANCHE ENERGY RATED

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.2 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    47 ns

  • Turn-on Time-Max (ton):

    22 ns

STF10NM60N Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STF10NM60N can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • The power dissipation of the STF10NM60N can be calculated using the formula: Pd = Vds * Id * (Rds(on) * Id + Vgs(th)), where Pd is the power dissipation, Vds is the drain-source voltage, Id is the drain current, Rds(on) is the on-state resistance, and Vgs(th) is the gate-source threshold voltage.
  • The recommended gate resistor value for the STF10NM60N is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase the turn-on time.
  • Yes, the STF10NM60N is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to ensure that the device is properly cooled and that the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
  • To protect the STF10NM60N from overvoltage and overcurrent, it's recommended to use a voltage regulator or a voltage clamp to limit the voltage, and a current sense resistor or a current limiter to limit the current. Additionally, a fuse or a circuit breaker can be used to protect the device from overcurrent.

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STF10NM60N Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image STF10NM60ND STMicroelectronics

Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB