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STF12NK80Z - STMicroelectronics

Description: N-channel 800 V, 585 mΩ typ., 10.5 A SuperMESH Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages

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STF12NK80Z - STMicroelectronics - PCB symbol
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STF12NK80Z - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP-2
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STF12NK80Z - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP-2
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STF12NK80Z Details

  • Manufacturer Part Number:

    STF12NK80Z

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    10.5 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    53 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF12NK80Z Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF12NK80Z is typically defined by the manufacturer as the maximum voltage and current ratings that the device can handle without damage. According to STMicroelectronics, the maximum SOA for the STF12NK80Z is Vds = 800V, Id = 12A, and Pd = 200W.
  • To ensure proper cooling of the STF12NK80Z, it's essential to provide a good thermal interface between the device and the heat sink. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and apply a thin layer (about 0.05 mm) to the device's exposed thermal pad. Also, ensure the heat sink is properly mounted and has sufficient airflow to dissipate heat efficiently.
  • The recommended gate drive voltage for the STF12NK80Z is typically between 10V to 15V, with a maximum gate-source voltage (Vgs) of ±20V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements, as excessive gate voltage can damage the device.
  • Yes, the STF12NK80Z is designed for high-frequency switching applications, with a maximum switching frequency of up to 100 kHz. However, it's crucial to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit to ensure reliable operation and minimize electromagnetic interference (EMI).
  • To protect the STF12NK80Z from overvoltage and overcurrent conditions, it's recommended to use a combination of voltage and current sensing circuits, along with protective components such as varistors, TVS diodes, and fuses. Additionally, consider implementing overvoltage and overcurrent detection circuits that can trigger a shutdown or fault signal to prevent device damage.

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STF12NK80Z Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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