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STF15N60M2-EP - STMicroelectronics

Description: MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220FP package

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STF15N60M2-EP - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP-2
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STF15N60M2-EP - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP-2
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STF15N60M2-EP Details

  • Manufacturer Part Number:

    STF15N60M2-EP

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STF15N60M2-EP Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STF15N60M2-EP is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and to ensure that the device is properly cooled to prevent overheating.
  • To ensure the reliability of the STF15N60M2-EP in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device. Additionally, the device should be operated within its specified maximum junction temperature (Tj) rating of 150°C.
  • The recommended gate drive voltage for the STF15N60M2-EP is typically between 10V to 15V, depending on the specific application requirements. However, it's essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage (Vgs) rating of ±20V to prevent damage to the device.
  • Yes, the STF15N60M2-EP can be used in a parallel configuration to increase current handling capability, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing. Additionally, the user should ensure that the total current rating of the parallel configuration does not exceed the maximum current rating of the individual devices.
  • The STF15N60M2-EP has a built-in electrostatic discharge (ESD) protection level of ±2kV human body model (HBM) and ±200V machine model (MM). However, it's still recommended to follow proper ESD handling and storage procedures to prevent damage to the device.

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STF15N60M2-EP Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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