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STF31N65M5 - STMicroelectronics

Description: N-channel 650 V, 124 mΩ typ., 22 A, MDmesh M5 Power MOSFETs in D²PAK, TO‑220FP, TO‑220 and TO-247 packages

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STF31N65M5 - STMicroelectronics - PCB symbol
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PCB Footprints
STF31N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP-2
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3D Models
STF31N65M5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP-2
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STF31N65M5 Details

  • Manufacturer Part Number:

    STF31N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.0011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    1.3 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF31N65M5 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature for the STF31N65M5 is 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 650V. Additionally, the device should be operated within the recommended operating area (SOA) to prevent overheating and ensure reliability.
  • The recommended gate resistor value for the STF31N65M5 is between 10Ω and 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and improve noise immunity.
  • To protect the STF31N65M5 from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The thermal resistance of the STF31N65M5 is Rth(j-a) = 0.45°C/W (junction-to-ambient) and Rth(j-c) = 0.15°C/W (junction-to-case). These values are important for thermal design and heat sink selection.

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STF31N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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STF31N65M5 Alternates

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Part Image STF30N65M5 STMicroelectronics

Power Field-Effect Transistor, 22A I(D), 650V, 0.139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB