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STF33N60M6 - STMicroelectronics

Description: N-channel 600 V, 105 mΩ typ., 25 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

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STF33N60M6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP (1)
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STF33N60M6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP (1)
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STF33N60M6 Details

  • Manufacturer Part Number:

    STF33N60M6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2018-07-26

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • JESD-609 Code:

    e3

  • Terminal Finish:

    Matte Tin (Sn) - annealed

STF33N60M6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF33N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STF33N60M6, this would typically be limited by the maximum junction temperature (Tj) of 175°C, the maximum drain-source voltage (Vds) of 600V, and the maximum drain current (Id) of 33A.
  • To ensure proper cooling of the STF33N60M6, it is essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by using a thermal interface material (TIM) with a low thermal resistance, such as thermal paste or thermal tape, between the device and the heat sink. The heat sink should be designed to provide adequate airflow and have a sufficient surface area to dissipate the heat generated by the device. Additionally, the PCB layout should be designed to minimize thermal resistance and ensure good heat flow.
  • The recommended gate drive voltage for the STF33N60M6 is typically between 10V and 15V, with a maximum gate-source voltage (Vgs) of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance. A higher gate drive voltage can result in faster switching times and lower switching losses, but it also increases the risk of gate oxide damage.
  • To protect the STF33N60M6 from electrostatic discharge (ESD), it is essential to follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and packaging materials, as well as ensuring that the device is stored in a dry, clean environment. During PCB assembly, ESD-sensitive devices should be handled last to minimize the risk of ESD damage. Additionally, the PCB design should include ESD protection components, such as TVS diodes or ESD protection arrays, to protect the device from ESD events.
  • The maximum allowed dv/dt for the STF33N60M6 is not explicitly stated in the datasheet, but it is typically limited by the device's internal capacitances and the risk of voltage overshoots. A general guideline is to limit the dv/dt to less than 10V/ns to ensure reliable operation and minimize the risk of voltage overshoots. However, the actual dv/dt limit may vary depending on the specific application and the device's operating conditions.

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STF33N60M6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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