Part Image

STF33N65M2 - STMicroelectronics

Description: N‑channel 650 V, 117 mΩ typ., 24 A MDmesh M2 Power MOSFET in a D²PAK, TO-220FP and I²PAK packages

Download STF33N65M2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STF33N65M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP_2022
click to zoom
3D Models
STF33N65M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP_2022
click to zoom

STF33N65M2 Details

  • Manufacturer Part Number:

    STF33N65M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    780 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    34 W

  • Pulsed Drain Current-Max (IDM):

    96 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF33N65M2 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of the STF33N65M2 is 175°C.
  • To ensure stability, it is recommended to use a low-ESR ceramic capacitor (e.g., 1 μF to 10 μF) between the drain and source pins, and to minimize the PCB layout inductance.
  • The recommended gate drive voltage for the STF33N65M2 is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
  • To protect the STF33N65M2, it is recommended to use a voltage clamp or a zener diode to limit the voltage, and to implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The thermal resistance (Rth) of the STF33N65M2 is 0.5°C/W (junction-to-case) and 1.5°C/W (junction-to-ambient) in a typical application.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STF33N65M2 Overview

Use the download button to access the STF33N65M2 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STF33, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STF33N65M2

Showing 0 results