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STF46N60M6 - STMicroelectronics

Description: N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO-220FP package

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STF46N60M6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO_220_FP
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STF46N60M6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO_220_FP
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STF46N60M6 Details

  • Manufacturer Part Number:

    STF46N60M6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2019-11-22

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STF46N60M6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF46N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal interface material to reduce the thermal resistance, and ensure good airflow around the device. You can also use thermal simulation tools to estimate the device's temperature under different operating conditions.
  • The recommended gate drive voltage for the STF46N60M6 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.
  • Yes, the STF46N60M6 is suitable for high-frequency switching applications up to several hundred kHz. However, you should consider the device's switching losses, gate charge, and parasitic capacitances when designing your circuit. You may need to use specialized gate drive circuits and layout techniques to minimize losses and ensure reliable operation.
  • The internal diode in the STF46N60M6 can cause voltage spikes and ringing during switching transitions. To mitigate this, use a snubber circuit or a diode clamp to reduce the voltage stress on the device. You can also use a gate drive circuit with a built-in diode emulation or a dedicated diode clamp function.

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STF46N60M6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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