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STF4N80K5 - STMicroelectronics

Description: N-channel 800 V, 2.1 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package

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STF4N80K5 - STMicroelectronics - PCB symbol
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PCB Footprints
STF4N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 4.1 TO-220FP type B package information*-
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STF4N80K5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - 4.1 TO-220FP type B package information*-
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STF4N80K5 Details

  • Manufacturer Part Number:

    STF4N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    74.5 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    2.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF4N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF4N80K5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be estimated to be around 10A/100V.
  • To ensure the STF4N80K5 is properly biased, follow the recommended biasing scheme in the datasheet, which includes a gate-source voltage (Vgs) of around 10V and a drain-source voltage (Vds) of around 50V. Additionally, ensure the device is operated within its recommended operating conditions.
  • For optimal thermal management, use a PCB layout that allows for good heat dissipation, such as using a thermal pad and thermal vias. Ensure the device is mounted on a heat sink or a metal core PCB. Follow the recommended land pattern and thermal design guidelines in the datasheet.
  • To protect the STF4N80K5 from overvoltage and overcurrent, use a voltage regulator or a voltage limiter to limit the voltage to the recommended maximum rating. Additionally, use a current limiter or a fuse to prevent overcurrent conditions. Implement overvoltage and overcurrent protection circuits according to the application requirements.
  • The recommended gate drive circuit for the STF4N80K5 includes a gate driver IC, such as the STMicroelectronics L638xE, which provides a high-current gate drive signal. Ensure the gate driver is properly biased and configured according to the datasheet recommendations.

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STF4N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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