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STF6N65K3 - STMicroelectronics

Description: N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK

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STF6N65K3 - STMicroelectronics - PCB symbol
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PCB Footprints
STF6N65K3 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO_220FP--
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3D Models
STF6N65K3 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO_220FP--
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STF6N65K3 Details

  • Manufacturer Part Number:

    STF6N65K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.2

  • Additional Feature:

    ULTRA LOW-ON RESISTANCE

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    5.4 A

  • Drain-source On Resistance-Max:

    1.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    21.6 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF6N65K3 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF6N65K3 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be estimated to be around 10A/60V.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink with a thermal resistance (RthSA) that is less than or equal to the device's RthJA. Also, ensure good thermal contact between the device and heat sink.
  • The recommended gate resistor value for the STF6N65K3 depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10Ω to 100Ω to ensure proper switching and minimize ringing.
  • Yes, the STF6N65K3 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, ensure that the device is properly cooled and the PCB layout is optimized for high-frequency operation.
  • Use a voltage clamp or transient voltage suppressor (TVS) to protect the device from overvoltage. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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STF6N65K3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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