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STF6N80K5 - STMicroelectronics

Description: N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

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STF6N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FPAB_2022
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STF6N80K5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FPAB_2022
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STF6N80K5 Details

  • Manufacturer Part Number:

    STF6N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    4.5 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

STF6N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STF6N80K5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be estimated to be around 10-15A for 10ms pulses, but this should be verified through simulation and testing.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink with a thermal resistance of around 1-2°C/W, and ensure good thermal contact between the device and heat sink. Also, consider airflow and convection cooling in your design.
  • The recommended gate drive voltage for the STF6N80K5 is between 10-15V, with a maximum of 20V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress and reduce device reliability.
  • To protect the STF6N80K5 from overvoltage and overcurrent, consider using a voltage clamp or transient voltage suppressor (TVS) to limit voltage spikes, and a current sense resistor or fuse to detect and respond to overcurrent conditions.
  • For optimal performance and minimal electromagnetic interference (EMI), use a 2-layer or 4-layer PCB with a solid ground plane, and route the high-frequency signals (e.g., gate drive) away from the power traces. Use a Kelvin connection for the source pin to minimize inductance.

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STF6N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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