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STF7N65M2 - STMicroelectronics

Description: N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP package

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STF7N65M2 - STMicroelectronics - PCB symbol
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PCB Footprints
STF7N65M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP_2022
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3D Models
STF7N65M2 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP_2022
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STF7N65M2 Details

  • Manufacturer Part Number:

    STF7N65M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    103 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.8 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF7N65M2 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature for the STF7N65M2 is 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 650V. Additionally, the device should be operated within the recommended operating area (SOA) to prevent overheating and ensure reliability.
  • The recommended gate resistor value for the STF7N65M2 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and improve noise immunity.
  • To protect the STF7N65M2 from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • For optimal thermal performance, the STF7N65M2 should be mounted on a PCB with a thermal pad and a heat sink. The PCB layout should also be designed to minimize parasitic inductance and capacitance, and to ensure good thermal conduction between the device and the heat sink.

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STF7N65M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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