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STF80N10F7 - STMicroelectronics

Description: STMicroelectronics STF80N10F7 N-channel MOSFET Transistor, 40 A, 100 V, 3-Pin TO-220FP

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STF80N10F7 - STMicroelectronics - PCB symbol
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PCB Footprints
STF80N10F7 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP (1)
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3D Models
STF80N10F7 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP (1)
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STF80N10F7 Details

  • Manufacturer Part Number:

    STF80N10F7

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220FP, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW-ON RESISTANCE

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF80N10F7 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STF80N10F7 can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure the STF80N10F7 is properly biased, make sure to provide a stable voltage supply, and ensure the gate-source voltage (Vgs) is within the recommended range of 2-4V. Also, ensure the drain-source voltage (Vds) is within the recommended range of 10-80V.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate-source and drain-source traces as short as possible, and use a solid ground plane to reduce inductance.
  • Yes, the STF80N10F7 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly biased, and the PCB layout is optimized for high-frequency operation.
  • To protect the STF80N10F7 from overvoltage and overcurrent conditions, use a voltage regulator to regulate the supply voltage, and add overcurrent protection devices such as fuses or current-sensing resistors. Also, ensure the device is properly heatsinked to prevent overheating.

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STF80N10F7 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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