Part Image

STFI13N60M2 - STMicroelectronics

Description: STFI13N60M2 N-Channel MOSFET, 11 A, 650 V MDmesh M2, 3-Pin I2PAKFP STMicroelectronics

Download STFI13N60M2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
STFI13N60M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAKFP (TO-281)_
click to zoom
3D Models
STFI13N60M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - I2PAKFP (TO-281)_
click to zoom

STFI13N60M2 Details

  • Manufacturer Part Number:

    STFI13N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    I2PAKFP-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.1 pF

  • JEDEC-95 Code:

    TO-281

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STFI13N60M2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STFI13N60M2 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
  • The recommended gate resistor value for the STFI13N60M2 is typically between 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.
  • Yes, the STFI13N60M2 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses and thermal management.
  • To protect the STFI13N60M2, use a suitable overvoltage protection circuit, such as a transient voltage suppressor (TVS), and implement overcurrent protection using a fuse or a current-sensing resistor.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

STFI13N60M2 Overview

Use the download button to access the STFI13N60M2 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like STFI1, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to STFI13N60M2

Showing 0 results